| 摘要 |
PURPOSE:To unify a phototransistor array onto the same substrate also including a peripheral circuit, and to form the array at low cost through a low process which does not exist in a single crystalline semiconductor by laminating NIPIN or PINIP type semiconductors onto the substrate and forming an IGFET with a channel forming region into IPI or INI regions. CONSTITUTION:A metallic film 2 made of Ni, Cr, Mo1Si, etc. is buried into the insulating substrate such as a glass or alumina substrate, and the surface is formed as approximately the same plane as the substrate. A metallic or semiconductor layer constituting a gate electrode is laminated again. The film is etched, and the gate electrode 12 is laminated and formed onto a gate insulator 11 in the lateral direction. A first conductive layer 2 shields incident light from the substrate side, and the IGFET20 is used as an IGFET having no photosensitivity merely. X-axis wiring is formed by first conductive layers 2, 3 and Y-axis wiring by a second conductive layer 9 in bipolar phototransistors 21, 22, and the phototransistors are constituted in matrix shape. |
