| 摘要 |
PURPOSE:To operate a surface luminescence laser by low threshold and low operating current by forming regions disordered by diffusing respectively P-type dopant and N-type dopant in superlattice layers. CONSTITUTION:A superlattice layer region 15 disordered by diffusing P-type dopant, and a superlattice region 16 disordered by diffusing N-type dopant are formed. When current is made to flow from a P-electrode 8 to an N- electrode 9, electron and hole recombine in an active region 17 constituted by a superlattice layer which is not made disordered, and light is generated. The disordered superlattice layers 15, 16 operate as clad layers which constrict light in the active region 17. |
