| 摘要 |
<p>PURPOSE:To judge a breakage of a sensor element caused by abnormality, by forming a plurality of piezoelectric resistances and detection resistances on a thin part forming deflecting part for detection of a signal of the semiconductor sensor element to compare the potential of a detection electrode with a set value in normal state. CONSTITUTION:A plurality of piezoelectric resistances 32 and one detection resistance 34a are formed on a thin part 31a for detection of signals of a semiconductor sensor element 31 and one detection resistance 34b if formed in a fixed section area. A detection voltage V3 as given when a cantilever beam 31 is normal can be set at a desired fixed value by selecting values of resistances R5 and R6. When the element is broken in a breakage forecast area H of the cantilever beam 31, a wire 35 in the area is cut off and the voltage V3 moves to a voltage value of an earth electrode Tg thereby allowing judgement of the breakage of the sensor element.</p> |
