发明名称 MASK FOR X-RAY EXPOSURE AND MANUFACTURE THEREOF
摘要 PURPOSE:To form a pattern in a good shape without decreasing a reflectance of a multilayer film reflecting mirror by making an X-ray exposure mask by a method wherein multilayer film reflecting mirror is formed on a substrate and then a reflection prevention film is formed according to a desired pattern on the multilayer film reflecting mirror. CONSTITUTION:A multilayer film reflecting mirror 2 is formed on a mask substrate 1 and then a reflection prevention film 4 is formed on the multilayer film reflecting mirror 2 according to a desired pattern 3, to make an X-ray exposure mask. For formation of the reflection prevention film 4 on the multilayer film reflecting mirror 2 according to a desired pattern, a resist coating process, a development process and a peeling process are required. However, the multilayer film reflecting mirror gets less damage in these processes compared with an etching process. What's more, a processing accuracy and a reliability can be remarkably increased since a circuit can be written by an EB lithographic equipment.
申请公布号 JPH01302723(A) 申请公布日期 1989.12.06
申请号 JP19880131422 申请日期 1988.05.31
申请人 TOSHIBA CORP 发明人 ITO MASAMITSU;KIKUCHI SACHIKO;HORI MASARU;MORI ICHIRO
分类号 G03F1/00;H01L21/027;H01L21/30 主分类号 G03F1/00
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