| 摘要 |
PURPOSE:To obtain a radiation detecting element excellent in generation efficiency of electron-hole pair in an a-Si film by thickening a metal electrode or a semiconductor film in an incident side of radiant rays, and thinning it in the facing side of the incident side. CONSTITUTION:The thickness of an Mo electrode 11 and that of a Ta electrode 12 are made thin gradually along the incidence direction of radiant rays, and an a-Si film 13 also is thinned in the same manner. Incident radiation mutually reacts with the electrode 11 and the electrode 12, and the energy attenuates while secondary radiation particle is emitted in the a-Si film 13. In this process, electron-hole pair generates in the a-Si film 13, and the electrode 12 and the electrode 11 are of ohmic and of Schottky, respectively, so that signal can be detected by PV operation, with a current amplifier 14. Thereby, a radiation detecting element excellent in the generation efficiency of electron-hole pair in the a-Si film 13 can be obtained.
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