| 摘要 |
<p>PURPOSE:To easily perform patterning of high precision even in case of lamination of materials different in etching rate by etching a first insulating film by the lift-off method. CONSTITUTION:After a metallic film 3 for a contact hole and the gate of a TFT is formed on all of the surface of a substrate, a desired resist R is patterned and the metallic film 3 is etched. A stress relaxing SiO2 film 4 is formed on all of the surface of the substrate, and the resist R is immersed in a prescribed peeling liquid to perform lift-off patterning of the SiO2 film 4, thus obtaining a gate electrode 3G and a metallic film pad 3P for the contact hole. After a second insulating film 5 consisting of a silicon nitride or the like and an amorphous silicon film 6 are successively laminated, a passivation film 7 consisting of an SiN film is formed by patterning. Thus, patterning is easily performed with a high precision though materials different in etching rate are laminated.</p> |
