发明名称 |
METHOD FOR MAKING A METALLIC INTERCONNECTION PATTERN OF THE COMPONENTS OF A VERY DENSE INTEGRATED CIRCUIT |
摘要 |
<p>A method of forming a planarization layer over a multilayered metal network which interconnects the components of a high-density integrated circuit and which includes conductors having steep edges disposed over a substrate. A layer of spin-on-glass is applied over the lower metal layer so as to have a thickness substantially equal to that of the lower metal layer and to form a thin film over the conductors. The spin-on-glass layer is uniformly etched to expose the upper surfaces of the conductors, and a dielectric layer is applied onto the etched spin-on-glass layer and upper surfaces of the conductors.</p> |
申请公布号 |
EP0221798(B1) |
申请公布日期 |
1989.12.06 |
申请号 |
EP19860402138 |
申请日期 |
1986.10.01 |
申请人 |
BULL S.A. |
发明人 |
MERENDA, PIERRE RESIDENCE LE CHAMBORD;LAMBERT, DANIEL;CHANTRAINE, PHILIPPE |
分类号 |
H01L21/3205;H01L21/31;H01L21/768;H01L23/532 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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