| 摘要 |
PCT No. PCT/DE85/00133 Sec. 371 Date Feb. 24, 1986 Sec. 102(e) Date Feb. 24, 1986 PCT Filed Apr. 25, 1985 PCT Pub. No. WO85/04986 PCT Pub. Date Nov. 7, 1985.A semiconductor element with a basic region, to which a bias voltage is applied from at least one boundary surface and which completely depletes the basic region of majority carriers and produces a potential minimum in the basic region for the majoity carriers, in which the latter are collected and moved. On at least one side of the potential minimum, the quantity, movement direction and/or speed of the minority carriers is controlled by the course of the potential minimum.
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