发明名称 MANUFACTURE OF SEMICONDUCTOR DEVICE
摘要 PURPOSE:To remove residue generated when forming a projecting electrode positively, and to improve reliability and yield, also by forming the projecting electrode to an opening section formed by exposing and developing both insulating photosensitive resin shaping first and second insulating photosensitive resin layers on an electrode section and removing both photosensitive resin. CONSTITUTION:A second metallic layer 23 is formed onto an insulating layer 21 containing an opening section 22, and the first thin liquefied photosensitive resin layer 24 is formed onto the second metallic layer 23. The whole is baked, and thin-filmy photosensitive resin 25 as second thick insulating photosensitive resin is pasted onto the liquefied photosensitive resin layer 24. The opening section 22 is masked so as to remove an electrode section corresponding to the opening section 22, the thin-filmy photosensitive resin layer 25 and the liquefied photosensitive resin layer 24 are exposed at the same time, and the opening 26 is formed through development after approximately fifteen min passes. A metallic layer 17 is exposed by using a developing solution for the liquefied photosensitive resin layer 24, the metallic projecting electrode 27 is formed by using electroplating technique, the photosensitive resin layers 25, 24 are exfoliated by employing a parting agent, and the columnar projecting electrode is formed.
申请公布号 JPS58143554(A) 申请公布日期 1983.08.26
申请号 JP19820026945 申请日期 1982.02.22
申请人 NIPPON DENSO KK 发明人 SONOBE TOSHIO;ISOBE HIDENORI;SUGITO YASUNARI;TERADA MASAKAZU
分类号 H01L21/60 主分类号 H01L21/60
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