| 摘要 |
PURPOSE:To obtain an aluminum nitride substrate for semiconductor having high bonding strength to various metals, by forming a thin film layer of a specific metal on a surface of sintered aluminum nitride composed mainly of AlN and containing specific amounts of yttrium, calcium and oxygen. CONSTITUTION:The objective aluminum nitride substrate for semiconductor is produced by forming a thin layer of one or more kinds of metals selected from Ti, Cr, Ni-Cr, Ta:N (tantalum nitride), Al, Mo and W on a surface of sintered aluminum nitride composed mainly of AlN, containing <=4wt.% of a calcium compound (in terms of CaO) and <=12wt.% of an yttrium compound (in terms of Y2O3) and having a total oxygen content of 0.01-10wt.% in the sintered material. The bonding strength between the sintered aluminum nitride and the thin metal layer is >=2.5kg/mm<2>. |
