| 摘要 |
<p>PURPOSE:To reduce insulation failure and to prevent deterioration of off- characteristics by providing an amorphous silicon layer which is formed on a gate insulation layer and which is so formed that the end part may cross a gate electrode and a part of the end part may be positioned above an opening. CONSTITUTION:A gate electrode 2 is formed on a insulating substrate 1, and further an auxiliary insulation layer 3 is formed, and this auxiliary insulating layer 3 is etched to form an opening 3a inside the gate electrode 2. Next, when forming an amorphous silicon layer 5 and an n type silicon layer 10, the amorphous silicon layer 5 is so formed that the end part 5a may cross the gate electrode 2 and a part of the end part 5a may be positioned above the opening 3a. Accordingly, when off voltage is applied to the gate electrode 2, the amorphous silicon layer 5 formed inside the opening 3a completely becomes off. Hereby, leakage currents from a drain electrode 7 to a source electrode 6 is reduced sharply, and off-characteristics of a-SiTFT is improved sharply.</p> |
