发明名称 |
Chemical modification of spin-on glass for improved performance in IC fabrication |
摘要 |
A process for chemically modifying spin-on-glass (SOG) for improved performance in semiconductor device fabrication is disclosed. To compensate for severe surface topographies associated with very large scale integration (VLSI) technology, a thicker non-etch back SOG process is utilized for forming a SOG layer over a chemical vapor deposition (CVD) layer. A single layer of SOG is formed over the CVD layer, providing planarizing coverage over formational or growth defects. The silylation of the SOG layer provides for the formation thicker single layers of SOG and significantly reduces the wet etching rate in diluted HF.
|
申请公布号 |
US4885262(A) |
申请公布日期 |
1989.12.05 |
申请号 |
US19890320763 |
申请日期 |
1989.03.08 |
申请人 |
INTEL CORPORATION |
发明人 |
TING, CHIU H.;RUCKER, THOMAS G.;SOBCZAK, ZBIGNIEW P. |
分类号 |
H01L21/3105;H01L21/316;H01L21/768 |
主分类号 |
H01L21/3105 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|