| 摘要 |
PURPOSE:To reduce manufacturing time and cost with simple assembling and miniaturize and lighten the whole device by forming an insulated gate type bipolar transistor (IGBT) for one phase and a reflux diode on the same substrate. CONSTITUTION:By connecting a P channel IGBTQ7 and an N channel IGBTQ2 in totem pole type, an electrode that becomes output U is shared, and the P channel IGBTQ7, the N channel IGBTQ2 and reflux diodes D1 and D2 are formed on the same substrate. Also, the potential of respective emitters E1 and E2 for the P channel IGBTQ7 and the N channel IGBTQ2 that becomes the standard potential of control voltage to be given to gate electrodes G1 and G2 becomes constant regardless of the output U. Accordingly, the power source VCC of a driving circuit DR can be shared for the upper arm side and the lower arm side. Hereby, the manufacturing time and the cost can be reduced with simple assembling, and the whole device can be miniaturized and lightened. |
