| 摘要 |
A reduction in the number of impurities and defects on a semiconductor wafer is provided by cleaning the wafer in a hydrochloric acid, hydrofluoric acid, and water solution. This HCl:HF:H2O solution removes silicon dioxide as well as metallic impurities from the wafer surface, thus preventing the formation of defects on the wafer and increasing the quality and yield of semiconductor devices.
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