发明名称 SEMICONDUCTOR MEMORY
摘要 <p>PURPOSE:To shorten an access time by setting the connecting point of a register and a data output terminal at a high impedance state at the time of switching on operation to read out initial data to the register to the operation to read out the data stored in a read only memory. CONSTITUTION:At the time of switching the initial data DINT to ROM data DROM, the output terminal of an initialize circuit 9A is connected to the connecting point D of a memory output terminal and the input terminal of the register, not controlling a memory side by an initial signal SINT. And the output terminal of the initialize circuit 9A is set at the high impedance state, and simultaneously, the ROM data DROM is transferred to the register 13. In such a way, since switching can be performed at high speed without being affected by the potential of a bit line, the ROM data DROM can be read out at high speed.</p>
申请公布号 JPH01300500(A) 申请公布日期 1989.12.04
申请号 JP19880131212 申请日期 1988.05.28
申请人 FUJITSU LTD 发明人 OKAWA TAKASHI
分类号 G11C17/00;G11C16/06 主分类号 G11C17/00
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