| 摘要 |
PURPOSE:To decrease parasitic resistance without making leakage currents flow by introducing impurity into a silicon substrate after forming a metal silicon compound so as to form a source-drain region and introducing impurity into the silicon substrate with a gate electrode as a mask. CONSTITUTION:After formation of a gate electrode 13, an SiO2 film 21 is formed by thermal oxidation. Next, an SiN film 22 is accumulated and etched back so as to form a side wall 23. Next, Ti is accumulated and heat-treated so as to form silicides 17 and 18 at each exposed part of an Si substrate 11 and a gate electrode 13. Next, with the gate electrode 13 as a mask, As ions 24 of about 3CHI10<15>/cm<-2> in dosage, an n<+> impurity, are implanted into an Si substrate 11. Thereafter, an SiO2 film 25 to cover silicides 17 and 18, etc., is accumulated and heat-treated and As ions 24 are diffused to form a source drain region 14. |
