| 摘要 |
PURPOSE: To enable a device utilizing a scanning tunneling microscopy(STM) technique by changing the electronic nature of a thin-film material in order to write data, sensing the change in the nature of a tunneling current in order to read data and changing the nature of the thin-film material in order to erase the data. CONSTITUTION: A film 12 is normally in a crystalline state 12a and the data is not written. A voltage source 14 applies a pulse W of a high level of a short period on a chip 11 of a probe to generate the tunneling electron current in this chip in order to write the data bit 12b. This current melts the independent region 12b of the film 12 by generating electric resistance heat, thereby changing the crystalline state to an amorphous state. The heat dissipating characteristic of the film 12 and a base body 13 has such characteristic that the film does not restore the original state when the film is rapidly cooled. As a result, the STM technique to change the nature of the medium is obtd.
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