| 摘要 |
PURPOSE:To prevent the occurrence of crack and improve the moisture resistance, by overposing an organic insulating film on an inorganic insulating film covering the periphery of the Al electrode of a semiconductor device, forming a gold bump on a part of said insulating films and on the surface of the electrode, and making the width of the exposed part of the inorganic insulating film about two times or less as large as the thickness of the film. CONSTITUTION:A load applied when assembling deforms an A film 1' which is a foundation. If the exposed part of a P-SiN film 2' from polyimide resin 3' is wide, stress concentration occurs on the boundary between polyimide and P-SiN on the principle of a cantilever to crack said P-SiN film 2' because P-SiN on Al is hard and brittle. However, limiting the width 1 of the exposed part of the P-SiN film 2' which is the foundation of polyimide to two times or less as large as the thickness t of said film decreases the stress to prevent P-SiN from cracking. The exposed part of the P-SiN film 2' which is the foundation can be narrowed self-adjustingly by etching the polyimide resin film 3' formed thereon. |
