| 摘要 |
PURPOSE:To form the good-quality film of a metallic compd. at a stable depositing rate by transporting the atomized metal generated from a soln. reservoir and contg. metallic elements to the upper part, blowing a carrier gas against the outlet opening of a transport pipe, and supplying the material onto a substrate. CONSTITUTION:The soln. contg. the metallic elements of a desired metallic compd. in the soln. reservoir 1 is atomized by an ultrasonic atomizing means 2. The atomized material contg. the metallic elements is transported almost vertically upward by the transport pipe 3 having a cooling jacket 8. The carrier gas such as O2 is blown against the outlet opening 3a of the pipe 3 by a carrier gas blowing means 4 in the reaction chamber 5. The atomized material is transported by the carrier gas onto the substrate 6 placed on a holder 7. The metallic elements react with each other on the surface of the substrate 6 heated to a specified temp. by a heater 9 in the holder 7, and the film of the metallic compd. is deposited and formed. |
