| 摘要 |
PURPOSE:To restrain kink phenomena, strengthen resistance to noise and enable maintenance of storage by adding a capacitive element into a storage element. CONSTITUTION:A capacitive element is constituted of a P-type MOSFET's channel 2, an insulating film 14 and a grounding wiring 9. When voltage is applied to terminals D and G with a terminal S earthed and a terminal B floated, the drain voltage current characteristics show kink phenomena in which currents increase abnormally in a saturation region. By giving potential to the terminal B, the capacitive element functions and draws hot carriers generated in the channel by impact ionization toward the terminal B and reduces the effect on the drain currents flowing on the channel surface on the side of and gate electrode G and restrains the kink phenomena. |
