| 摘要 |
A composite film is provided which has a first layer of WSix, where x is greater than 2, over which is disposed a second layer of a tungsten complex consisting substantially of tungsten with a small amount of silicon therein, typically less than 5%. Both layers are deposited in situ in a cold wall chemical vapor deposition chamber at a substrate temperature of between 500 DEG and 550 DEG C. Before initiating the deposition process for these first and second layers, the substrate onto which they are to be deposited is first plasma etched with NF3 as the reactant gas, then with H2 as the reactant gas, both steps being performed at approximately 100 to 200 volts self-bias. WSix is then deposited onto the surface of the substrate using a gas flow rate for silane which is 20 to 80 times the flow rate of tungsten silicide, followed by deposition of a tungsten complex as the second layer, using a gas flow rate for tungsten hexafluoride which is 1 to 3 times the flow rate of silane, and a gas flow rate of hydrogen which is about 10 times the flow rate of silane. Similarly, in another embodiment, the tungsten complex without the silicide layer is deposited directly onto a silicon surface using the same process as for the tungsten complex in the second layer of the first embodiment. |
