| 摘要 |
<p>A method of manufacturing high voltage breakdown semiconductor diodes (10) of the type comprising a number of individual p-n junction diodes connected in series comprises cutting the individual diodes from a semiconductor wafer and then profiling the external surfaces of the junctions (12, 13) of the individual diodes (10) either by the known trench etching technique or using a suitably profiled grinding wheel.</p> |
