发明名称 DISPOSITIVO DI POTENZA A SEMICONDUTTORE COSTITUITO DA UNA MOLTEPLICITA' DI ELEMENTI ATTIVI UGUALI COLLEGATI IN PARALLELO.
摘要 A multiplicity of semiconductor chips constituting the active elements of a semiconductor power device are attached, in a predetermined configuration, to a metal plate which acts as both a support and a first electrical terminal. Two other electrical terminals are formed by two metal electrodes having an interdigitated structure with the fingers of one electrode being inserted between those of the other electrode and which are positioned above the semiconductor chips and have tabs for establishing a connection between the electrodes and the two contact areas of each chip.
申请公布号 IT1212708(B) 申请公布日期 1989.11.30
申请号 IT19830019832 申请日期 1983.02.28
申请人 SGS ATES COMPONENTI ELETTRONICI S.P.A.ORA SGS MICROELETTRONICA SPA 发明人 LUCIANO GANDOLFI;GIUSEPPE PERLA
分类号 H01L25/18;H01L23/48;H01L23/52;H01L25/04;H01L25/07;(IPC1-7):H01L/ 主分类号 H01L25/18
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