发明名称 PROCESS FOR THE PRODUCTION OF PHOTORESIST PATTERNS
摘要 1. Process for the production of photoresist structures from positive-working copy materials, essentially comprising a substrate and an applied, photosensitive mixture of a binder which is soluble in water and soluble or at least swellable in aqueous-alkaline solutions, and diazonaphthoquinone and solvent, by a) pre-drying the mixture on the substrate at a temperature in the range between 20 and 100 degrees C, b) exposing the material imagewise with actinic radiation, c) heating the exposed coating at a temperature in the range between about 120 and 160 degrees C within about 15 to 90 seconds, and d) developing the material by removing the exposed areas using an aqueous-alkaline solution.
申请公布号 DE3666638(D1) 申请公布日期 1989.11.30
申请号 DE19863666638 申请日期 1986.03.05
申请人 HOECHST CELANESE CORPORATION 发明人 SPAK, MARK A.
分类号 G03C5/00;G03C1/72;G03F7/16;G03F7/38;(IPC1-7):G03F7/16;G03F7/26 主分类号 G03C5/00
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