发明名称 DRY ETCHING METHOD AND DEVICE THEREOF
摘要 The method comprises the steps of placing a workpiece on an electrode disposed in a processing chamber; introducing an etching gas into the processing chamber; exciting the etching gas to generate a plasma ; and applying a periodical voltage to the electrode which wave has a first portion with a voltage that electrons are allowed to impinge on the workpiece and a second portion corresponding with voltage for accelerating positive ions toward the workpiece, which voltage includes a first constant component for generating an accelerating field and a second increasing component for coancelling the increasing effect of charge-up at the workpiece surface.
申请公布号 KR890004882(B1) 申请公布日期 1989.11.30
申请号 KR19840007903 申请日期 1984.12.13
申请人 HITACHI LTD 发明人 OJUBO NOBORU
分类号 H01L21/302;C23F4/00;H01J37/32;H01L21/306;H01L21/3065;(IPC1-7):H01L21/302 主分类号 H01L21/302
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