MANUFACTURE OF ELECTRODE ON SEMICONDUCTOR BODY

摘要

The manufacturing method of the semiconductor multi layer interconnection for preventing the short has the following steps: (a) depositing metal layer (3) with chemical stability to prevent hillock of Aluminium metal layer (2) formed on a oxide layer (1) ; (b) forming a pattern by etching the metal layer (2,3) ; (c) depositing LTO (low temperature oxide layer) (4) to imsulate ; (d) forming a contact window (5) by etching the LTO (4) and metal layer (3) ; (e) forming a second metal interconnection pattern by using the second Al metal layer (6).