| 摘要 |
PURPOSE:To reduce the series resistance between source.gate electrode improving performance by a method wherein ion is implanted to form source.drain regions with high concentration impurity assuming gate electrode as the mask electrode and the ohmic electrodes for source.drain the formed by means of plating process. CONSTITUTION:The n type GaAs layer 32 is formed on semiinsulated GaAs substrate 31 and after making a specified hole for gate electrode, a gate electrode film 35 forming Schottky barrier is evaporated on the protective film 32. Then source region 36 and drain region 37 with electronic concentration higher than that of n type GaAs layer 32 are formed by means of implanting ion of donar impurity making use of masking action of the gate electrode film 35 and heat-treatment. Next the gate electrode film 35 is oxidized to form oxide film 38 thereon. Finally the source.drain region is coated with metal coming into ohmic contact with the n type GaAs such as AuGe, AgSn, AuTe, AgIn alloys etc. and heat-treated producing source electrode 39 and drain electrode 40. |
