| 摘要 |
PURPOSE:To obtain high luminance, by arranging a current blocking layer composed of semiconductor with a conductivity type inverse to a semiconductor substrate, just under an electrode, and between the semiconductor substrate with a conductivity type and clad layers grown thereon. CONSTITUTION:Between a semiconductor substrate 5 and clad layers 2, 4 thereon, a current blocking layer 7 with a conductivity type inverse to the semiconductor substrate 5 is arranged just under an electrode 1. As a result, current flowing between the electrode 1 formed on the main luminous surface of a light emitting diode chip and the other side of the semiconductor substrate distributes, so as to evade the current blocking layer 7 and flow through both sides of the layer 7. As for an active layer 3 sandwiched by the clad layers 2, 4, the current is blocked in the central region under the electrode 1, and the current intensity is decreased. However, on both sides of the region, the current is constricted, and so its density is remarkably increased. Thereby, light emission just under the electrode is prevented, and the light generated in the active layer can be effectively led out, so that high luminance is obtained. |
