发明名称 Stacked double density memory module using industry standard memory chips
摘要 A stacked double density memory module may be formed from two industry standard memory chips, by jumpering the unused and chip enable pins on one chip and then stacking the jumpered chip on the other chip with the pins on the jumpered (top) chip contacting the corresponding pins on the other (bottom) chip except for the chip select pins. In a preferred embodiment for use with 64K or one megabit DRAMs, the top chip is jumpered with a U-shaped strap which runs from the unused pin to the chip enable pin. The chip enable pin is bent toward the chip body to retain the strap in place. The technique may also be employed for stacking other industry standard memory or array chips.
申请公布号 US4884237(A) 申请公布日期 1989.11.28
申请号 US19890324958 申请日期 1989.03.17
申请人 INTERNATIONAL BUSINESS MACHINES CORPORATION 发明人 MUELLER, WOLFGANG R.;SPENCER, II, GWYNNE W.
分类号 H01L25/18;G11C5/00;G11C11/21;G11C11/401;H01L23/48;H01L23/50;H01L25/10;H01L25/11;H01L27/10 主分类号 H01L25/18
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