发明名称 |
Method of fabricating self aligned semiconductor devices |
摘要 |
A self aligned method of fabricating a self aligned semiconductor device employs an initial step in which a first window having an inner perimeter and outer perimeter is opened through a first protective layer situated atop a semiconductor substrate, to divide the substrate into three separate zones. The window exposes a first surface portion of the semiconductor substrate and circumferentially defines or encompasses a second central portion of the protective layer as well as a second unexposed surface portion of the substrate. A third surface portion of the substrate lies beyond the outer perimeter of the first window. Precisely aligned substrate regions of the same or different conductivity type can be established by using differentially etchable materials to mask designated surface portions of the substrate.
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申请公布号 |
US4883767(A) |
申请公布日期 |
1989.11.28 |
申请号 |
US19880220353 |
申请日期 |
1988.07.14 |
申请人 |
GENERAL ELECTRIC COMPANY |
发明人 |
GRAY, PETER V.;BALIGA, BANTVAL J.;CHANG, MIKE F. S.;PIFER, GEORGE C. |
分类号 |
H01L21/033;H01L21/331;H01L21/332;H01L21/336 |
主分类号 |
H01L21/033 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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