发明名称 |
Method of producing thin film transistor |
摘要 |
A method of producing a thin film transistor comprises the steps of preparing a structure having a substrate, an active layer and a diffusion layer formed on the substrate, and a gate electrode formed on the active layer, forming on the structure an interlayer insulator layer made of a silicon oxide hydrate (SiOxHy) having a predetermined composition, forming contact holes in the interlayer insulator layer, forming a wiring layer on the interlayer insulator layer, and carrying out a thermal process thereby diffusing hydrogen atoms within the interlayer insulator layer into at least the active layer and the diffusion layer.
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申请公布号 |
US4883766(A) |
申请公布日期 |
1989.11.28 |
申请号 |
US19880269452 |
申请日期 |
1988.11.10 |
申请人 |
RICOH COMPANY, LTD.;RICOH RESEARCH INSTITUTE OF GENERAL ELECTRONICS |
发明人 |
ISHIDA, MAMORU;INAKI, SHUNICHI;AKIYAMA, YOSHIKAZU;KOHATA, MITSUHIRO |
分类号 |
H01L27/12;H01L21/30;H01L21/324;H01L21/336;H01L29/78;H01L29/786 |
主分类号 |
H01L27/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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