| 摘要 |
PURPOSE:To obtain a semiconductor polycrystal wafer having grains of a large size by melting and solidifying a wafer formed rom semiconductor powder under specific conditions. CONSTITUTION:A semiconductor polycrystal wafer is produced from semiconductor powder by a production method consisting of a step tor forming a wafer using a high-temperature thermocompression bonding or a method using an adhesive and then successively melting and solidifying the wafer from one end thereof to the other. In the process, the following method (a) or (b) is adopted. Method (a), a piece 2 of single crystal having a prescribed crystal orientation is placed on at least one end of a wafer 3 consisting of the afore- mentioned semiconductor powder, then successively melted and solidified from the vicinity of the boundary with the wafer 3 (4 and 4 are recrystallization regions; 5 is a melting zone; 7 and 7 are lamps). Method (b), semiconductor powder 8 having a particle diameter almost equal to a desired wafer thickness in an amount of 5-20% is contained in the semiconductor powder 10 to be a raw material (9 is, e.g., Sn, for reducing melting point) and the wafer 3 is successively melted and solidified from one end thereof to the other. |
