| 摘要 |
PURPOSE:To obtain the title element with improved light output in forward direction by using a semi-spherical lens for one part of the main surface of a semiconductor substrate and by providing a concave mirror formed by processing the semiconductor at the periphery of the semi-spherical lens. CONSTITUTION:A concave mirror 10 by processing the surface of a semiconductor substrate is provided at the peliphery of a semi-shperical lens 9 of a light- emitting element where one part of the main surface of a semiconductor substrate is formed by a semi-spherical lens 9. For example, an n-type GaAs layer 3, p-type GaAlAs layer 4, a p-type GaAlAs layer 5, an n-type GaAlAs layer 6, and a n<+> type GaAlAs layer 7 are laminated on a substrate 2 consisting of p<+> type GaAs. Then, the central part of the n type GaAs layer 3 is removed in circular shape and a current path area 8 is provided and a semi-spherical lens 9 with a radius of curvature of approximately 100 to 200mum is provided at the main surface of a light-emitting diode chip 1 corresponding to the current path area 8. Also, a concave mirror 10 approximately several mum to 100mum in the radius of curvature is provided along the surface of periphery of the semi-spherical lens 9. |
