| 摘要 |
PURPOSE:To obtain a curing layer having a thickness equivalent to the thickness of the cured layer of the upper part of a resist pattern on the side wall of the resist pattern by applying a curing light from the direction inclined to a wafer. CONSTITUTION:In a process in which a patterned resist layer is cured or hardened, in order to improve the curing effect at the side wall of the resist pattern, a curing light is applied to the direction inclined to a wafer 1. For instance, the wafer 1 is mounted on a stage 2 having an inclination to the curing light. The light emitted from a light source 3 is reformed into the light with a uniform intensity by a mirror 4 and applied to the wafer 1. Further, in order to apply the light uniformly to all the directions of the resist pattern to be cured, the stage 2 is turned. With this constitution, as a sufficiently cured layer is obtained not only on the upper surface of the resist pattern but also on the side wall of the resist pattern, the heat-resistance of the pattern edge part which is necessary for following processes can be improved. |
