| 摘要 |
PURPOSE:To easily find out a memory cell by a method wherein a width of parts which are parts of lines of a gate electrode, where the memory cell is not formed and which are used as wiring parts is made a width which is different from that of other parts at intervals of definite numbers of the lines of the gate electrode. CONSTITUTION:A memory cell is not formed under a source line 21; parts of word lines 10 which overlap with the source line 21 are used only as wiring parts. A width of the parts used as the wiring parts of the word lines 10 is made wider at intervals of prescribed numbers of the word lines 10; wide-width parts 11 are formed. The wide-width parts 11 used as marks are formed at definite intervals in the central parts of a memory array region; accordingly, even when the number of memory cells is increased, it is possible to immediately and accurately find out a memory cell situated near the center. |
