发明名称 |
THE ADDRESS TRANSITION DETECTION CIRCUIT |
摘要 |
Transistor circuit for a semiconductor device with hysteresis operation comprises: a detector for generating an output signal in response to an input signal between two threshold levels, and a selector for selecting one of the threshold levels in accordance with the output signal and applying it to the detector. Device is made by a process in which no shallow implantation in the NMOS transistor fabrication step of a CMOS process is applied to a transistor having a low threshold voltage.
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申请公布号 |
KR890004763(B1) |
申请公布日期 |
1989.11.25 |
申请号 |
KR19850000954 |
申请日期 |
1985.02.15 |
申请人 |
TOSHIBA CORP. |
发明人 |
YASUDA, HIROSHI;OCHI, KIYOFUMI;MASUOKA, FUJIO |
分类号 |
G11C11/41;G11C8/00;G11C11/34;H03K3/3565;(IPC1-7):G11C11/34 |
主分类号 |
G11C11/41 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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