发明名称 THE ADDRESS TRANSITION DETECTION CIRCUIT
摘要 Transistor circuit for a semiconductor device with hysteresis operation comprises: a detector for generating an output signal in response to an input signal between two threshold levels, and a selector for selecting one of the threshold levels in accordance with the output signal and applying it to the detector. Device is made by a process in which no shallow implantation in the NMOS transistor fabrication step of a CMOS process is applied to a transistor having a low threshold voltage.
申请公布号 KR890004763(B1) 申请公布日期 1989.11.25
申请号 KR19850000954 申请日期 1985.02.15
申请人 TOSHIBA CORP. 发明人 YASUDA, HIROSHI;OCHI, KIYOFUMI;MASUOKA, FUJIO
分类号 G11C11/41;G11C8/00;G11C11/34;H03K3/3565;(IPC1-7):G11C11/34 主分类号 G11C11/41
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