| 摘要 |
<p>A partial random access memory includes a plurality of memory cells (MC1 - MC4) arrayed in matrix form, a plurality of pairs of bit lines extending in a column direction, each of the plurality of memory cells being coupled to corresponding one of pairs of bit lines, and a plurality of word lines (WL1i, WL2i, WL3i) including a plurality of first and second word lines (WL1i, WL2i). One first word line and one second word line are paired and arranged on both sides of an arrangement of the memory cells in a row direction. Each of the plurality of memory cells is connected to at least one of the first and second word lines. A activating circuit (7, 9, 28) coupled to the plurality of word lines separately activates the first and second word lines, depending on an address signal supplied from an external circuit, thereby independently selecting the first and second word lines. A input/output circuit (8, 10, 29) coupled to the plurality of bit lines writes input data (D0 - D7) into corresponding memory cells and reads out output data (D0 - D7) from corresponding memory cells.</p> |
