发明名称 Static ram with single event immunity.
摘要 <p>A new and improved semiconductor memory device incorporating a coupling capacitor between two CMOS inverters to immunize the circuit from radiation interference without the known disadvantages of resistive hardened memory device.</p>
申请公布号 EP0342466(A2) 申请公布日期 1989.11.23
申请号 EP19890108234 申请日期 1989.05.08
申请人 NATIONAL SEMICONDUCTOR CORPORATION 发明人 SMITH, FREDERICK;YU, ROBERT
分类号 G11C5/00;G11C14/00;G11C11/412;H01L21/8244;H01L27/11 主分类号 G11C5/00
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