发明名称 |
Static ram with single event immunity. |
摘要 |
<p>A new and improved semiconductor memory device incorporating a coupling capacitor between two CMOS inverters to immunize the circuit from radiation interference without the known disadvantages of resistive hardened memory device.</p> |
申请公布号 |
EP0342466(A2) |
申请公布日期 |
1989.11.23 |
申请号 |
EP19890108234 |
申请日期 |
1989.05.08 |
申请人 |
NATIONAL SEMICONDUCTOR CORPORATION |
发明人 |
SMITH, FREDERICK;YU, ROBERT |
分类号 |
G11C5/00;G11C14/00;G11C11/412;H01L21/8244;H01L27/11 |
主分类号 |
G11C5/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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