| 摘要 |
The invention concerns a device for microwaves millimetrewaves and submillimetre waves consisting of a variable capacitance diode (varactor diode) designed so that it is suitable for making contact according to conventional methods in wave conductors, open quasi- optical structures and plane (monolithic) circuits. The diode, called a QBV diode (Quantum Barrier Varactor diode), is principally intended for use for frequency multiplication, but can also be used for other frequency conversions and for amplification. The device is characterized by a semiconductor with a potential barrier designed to prevent the passage of electrons, symmetrically enclosed by i. a layer of low-doped n-type semiconductor material, intended to create a capacitance with a symmetrical voltage dependence, followed by ii. high-doped conductive semiconductor material, followed by iii. ohmic contact with metal, and with an external design suitable for contact according to conventional methods in wave conductors and open quasi-optical structures. <IMAGE> |
