| 摘要 |
PURPOSE:To enable an excellent control through a gate by a method wherein a channel of an upright MOS transistor is made small in thickness. CONSTITUTION:An upright MOS transistor, where an insulating film 10 is sandwiched in between a channel 50 and a gate 30, is composed of a source 20 and a drain 10. The thin film channel 50 is formed to have a specified thickness in such a manner that the side wall of a second groove is thermally oxidized to form a gate oxide film 20nm or so in thickness and a channel section is made thinner through a thermal oxidation to be as thick as required. By these processes, only the thin film channel section 50 of a device is in a floating state, so that the potential of all the channel can be controlled by a gate potential. |
