| 摘要 |
PURPOSE:To prevent an overhang from occurring so as to restrain a disconnection completely by a method wherein a first electrode layer is provided around a contact hole of a Schottky barrier diode. CONSTITUTION:A first insulating layer 3 deposited of a semiconductor substrate 1 and contact holes 4 and 5 of a circuit element formed by etching the first insulating layer 3 are provided. The contact hole 4 is used to bring elements other than a Schottky barrier diode 2 into an ohmic contact. A first electrode layer 7 formed of aluminum which contains Si is provided around a contact hole 6 of the Schottky barrier diode. By these processes, even if a layer metal of the first electrode layer 7 is subjected to a dry etching, an overhang is prevented from occurring around the contact hole 6, so that a disconnecting can be completely restrained. |
