发明名称 SEMICONDUCTOR DEVICE AND MANUFACTURE THEREOF
摘要 PURPOSE:To prevent the decrease of a device in yield due to a defective forming of a pattern by a method wherein a pad area section is formed of a multilayer metal layer which comprises an Al layer and a Cu diffusion preventing layer, and an element area is formed of an Al layer which contains no Cu diffusion preventing layer. CONSTITUTION:A pad area section is formed of a multilayer metal 5 as an electrode metal of Cu wire bonding products and single layer metal 21 is employed as an element or an inter-element wiring metal. An Al layer 51 of a first layer of the multilayer metal 5 is in ohmic contact with a Si substrate and concurrently protects a V layer 52 against cracks, the V layer 52 of a second layer serves to prevent the diffusion of Cu, and an Al layer 53 of a third layer is wire-bonded to a Cu wire and concurrently protects the V layer 52 against oxidation. And, an Al layer containing no Cu diffusion preventing layer is used as the single layer metal 21. By these processes, Cu can be prevented from diffusing into an active region under the pad area and a device of this design can be prevented from decreasing in yield due to the defective forming of a pattern on an element area.
申请公布号 JPH01290232(A) 申请公布日期 1989.11.22
申请号 JP19880119205 申请日期 1988.05.18
申请人 TOSHIBA CORP 发明人 ATSUMI TSUNEO;KUSUHASHI NORIYUKI;MUKAI NAOMI
分类号 H01L21/60 主分类号 H01L21/60
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