| 摘要 |
PURPOSE:To obtain a hollow susceptor made of SiC causing no particular contamination problem by impurities by forming an SiC film on the surface of a base body prepd. by forming plural through holes on the surface of a plate having spot facing surfaces for holding wafers, forming then SiC bodies on the internal peripheral surface of the through holes by removing the base body, and connecting the SiC film with each other with said SiC bodies. CONSTITUTION:A base body 1 comprising a plate having spot facing surfaces 2 for holding wafers and consisting of a material removable by combustion or dissolution is prepd. wherein plural through holes 3 are formed on the surface of the plate. An SiC film 4 is formed on the external surface and in the through holes 3 by executing CVD treatment on said base body 1. SiC is also vapor- deposited on the internal surface of the holes 3 by the CVD treatment to connect thus the coating films 4 on both plate surfaces of the base body with the SiC on the internal peripheral surface of the holes 3. The base body 1 is then removed by combustion or dissolution, thus a hollow susceptor 8 made of SiC having a columnar rib 7 in the formed hollow part 6, is obtd. Said susceptor 8 has high rigidity, strength, dimensional accuracy, etc., and is superior in handling due to its light weight characteristic. |
