| 摘要 |
PURPOSE:To make possible the formation of a resist pattern having thermoresisting property necessary for etching mask with high resolution using a dry development by applying a resist obtd. by mixing polybutadiene cyclized >=30% of double bonds or its derivative and an adduct contg. a benzene ring or a halogen element, on a supporting plate. CONSTITUTION:The resist obtd. by mixing the polybutadiene cyclized >=30% of the double bonds or its derivative and the adduct contg. at least one of the benzene ring and the halogen element, is applied on the substrate plate. And the resist is exposed by a light, X rays or an electron beam, and then developed in the downstream of plasma of an oxygen contg. gas. The glass transition temp. of the resist is improved by cyclizing a host polymer. As the resist displays selective etching property by using the adduct contg. the benzene ring or the halogen element, and said resist is subjected to the dry-development in the downstream of the plasma of the oxygen contg. gas, the resist pattern having a sufficient thermo-resisting property as the etching mask is formed with the high resolution. |
