发明名称 METHOD FOR PRODUCING SINGLE-CRYSTAL GROWTH IN LINBO3
摘要 A method for producing LiNbO3 single crystal is composed of (I) drying Li1+xNb1+xO3 (0.1<=X <= 0.2) base material at 150-200≦̸C, (2) mixing and crushing, (3)recrushing for 12hrs at 7200 after synthesizing, (4)heat treating at 1300≦̸C in crystal growing furnace with Mo single crystal plate seed, (5)poling at 240≦̸C which is higher than curie temp. The driving force in process (4), is capillary force and the thickness of the single crystal can be controlled by controlling that of Mo plate. This method has the advantage of low price for single crystal production and low loss of ingot during cutting.
申请公布号 KR890004636(B1) 申请公布日期 1989.11.21
申请号 KR19860005213 申请日期 1986.06.28
申请人 SAMSUNG ELECTRONICS CO.LTD. 发明人 SONG HYO-IL
分类号 C30B29/30;(IPC1-7):C30B29/30 主分类号 C30B29/30
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