| 摘要 |
<p>PURPOSE:To obtain the normal intrinsic patterns and to eliminate the short circuit between picture element electrodes and metallic wirings such as source wires or gate wires by subjecting a transparent conductive film to electrolytic etching. CONSTITUTION:The transparent conductive film is exactly patterned by 1st patterning of the transparent conductive film, 2nd patterning of a thin metallic film and the reformation of the 1st patterns of the transparent conductive film and the transparent conductive film 19 is etched by electrolytic corrosion at the time of the repatterning. The patterns of the transparent conductive film 19 and the thin metallic film 20 are, therefore, short circuited in the parts etched by this etching liquid and in addition, these parts are limited to the parts where the films come into contact with the etching liquid. Then, even if there are the parts where the resist (protective film) is partially lacked and the transparent conductive film 19 is exposed, these parts are not etched unless the transparent conductive film pattern thereof are short circuited to the thin metallic film pattern and, therefore, only the short circuit points can be corrected.</p> |
