| 摘要 |
PURPOSE:To obtain a photosensitive body having high durability for repeated use and providing superior picture image quality by specifying contents of C and N in a surface modifying layer, an integrated area of an infrared absorption curve at a specified wave number, and conditions for forming the surface modifying layer, etc. CONSTITUTION:The surface modifying layer formed on the surface of a photoconductive layer of the title photosensitive body consists of amorphous hydrogenated and/or halogenated silicon contg. also elementary impurities of the group VA of the periodic table, and the contents of C and N in the surface modifying layer is defined by 30atomic%<=[C]<100atomic%, and 0atomic%<[N]<=50atomic%, respectively. An integrated area (S) of an infrared absorption curve at 1,200-1,300cm<-1> wave number is within a range expressed by the formula I, and the surface modifying layer is doped with compds. of the elementary impurities in the stage of forming the surface modifying layer under conditions defined by 10<-3>vol.ppm<=[concn. of compds. of elementary impurities]/[concn. of Si compd.]<=10<3>vol.ppm. Thus, a photosensitive body causing no degradation of picture image quality and having superior durability for printing is obtd. |
