发明名称 POSITIVE TYPE PHOTORESIST MATERIAL
摘要 PURPOSE:To enhance the resolution and heat resistance of the resist without impairing the sensitivity and process stability thereof by using a novolak resin having a specific unit and 1, 2-quinonediazide compd. CONSTITUTION:The resist material consists of the alkaline soluble novolak resin (A) contg. the unit expressed by the formula and the 1, 2-quinonediazide compd. In the formula, R denotes H, alkyl of 1-5C, etc.; (a) denotes 1, 2; X denotes alkyl of 1-5C, phenyl, etc.; B denotes carbonyl, sulfonyl, etc. X is preferably -SO3H and/or -COOH and/or -OH and/or (substd.) alkyl and/or (substd.) phenyl and/or (substd.) naphthyl and/or aralkyl contg. at least >=1 salts thereof.
申请公布号 JPH01288852(A) 申请公布日期 1989.11.21
申请号 JP19880118278 申请日期 1988.05.17
申请人 TOSOH CORP 发明人 TSUTSUMI YOSHITAKA;KAMIMURA TERUHISA;HASEGAWA MASAZUMI
分类号 G03C1/72;G03F7/023 主分类号 G03C1/72
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