发明名称 |
Method of making a double injection field effect transistor |
摘要 |
Double injection field effect transistors, which may be horizontally or vertically arranged, each include a body of semiconductor material extending between two current-carrying electrodes and forming a current path therebetween. The semiconductor body of each may be substantially intrinsic or lightly doped. One or more control electrodes or gates located adjacent to each current path project a variable electric field over the ambipolar path, which modulates current by controlling the amount of charge carriers of both polarities injected into the semiconductor body. In most of the single gate embodiments, the electrodes extend across a portion, preferably a major portion such as 75% or 90%, or the length of the current path, but not the entire length of the current path. The embodiments having a plurality of gates typically have two insulated gates, one extending from the anode electrode and the other extending from the cathode electrode. The gates in a single device may overlap. Embodiments having electrodes with doped microcrystalline regions for improved carrier injection are disclosed. Methods for making planar double injection field effect transistors having a plurality of deposited noncrystalline semiconductor layers for clean interface formation between semiconductor layers are also disclosed.
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申请公布号 |
US4882295(A) |
申请公布日期 |
1989.11.21 |
申请号 |
US19890328666 |
申请日期 |
1989.03.27 |
申请人 |
ENERGY CONVERSION DEVICES, INC. |
发明人 |
CZUBATYJ, WOLODYMYR;HACK, MICHAEL G.;SHUR, MICHAEL |
分类号 |
H01L27/092;H01L29/739;H01L29/772;H01L29/812;H01L33/00;H01L33/18;H01S5/042;H01S5/062;H01S5/30 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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