| 摘要 |
In an NPN transistor, a contact base region, an active base region, and a further base region are formed in the silicon substrate. The further base region is between the contact base region and the active base region, and is adjacent to the contact base region and the active base region. The further base region has a depth shallower than that of the contact base region and deeper than that of the active base region. In the method of forming the bipolar transistor, a polysilicon semiconductor layer is formed on a semiconductor substrate. The polysilicon semiconductor layer is partially etched to form a base leading electrode and an emitter leading electrode. A semiconductor impurity is implanted into a base forming region of the silicon substrate via that portion where the polysilicon semiconductor layer is removed.
|
